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Silicon Quantum Integrated Circuits: Silicon-Germanium Heterostructure Devices: Basics and Realisations Softcover reprint of hardcover 1st ed. 2005 Edition
Author(s): E. Kasper (Author), D.J. Paul (Author)
- Publisher: Springer
- Publication Date: October 21, 2010
- Edition: Softcover reprint of hardcover 1st ed. 2005
- Language: English
- Print length: 376 pages
- ISBN-10: 9783642060380
- ISBN-13: 9783642060380
Book Description
Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
Editorial Reviews
From the Back Cover
Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
