MOS (Metal Oxide Semiconductor) Physics and Technology
Author(s): E. H. Nicollian (Author), J. R. Brews (Author)
- Publisher: Wiley-Interscience
- Publication Date: November 21, 2002
- Edition: 1st
- Language: English
- Print length: 928 pages
- ISBN-10: 047143079X
- ISBN-13: 9780471430797
Book Description
Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
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The Wiley Classics Library consists of selected books that have become recognized classics in their respective fields. With these new unabridged and inexpensive editions, Wiley hopes to extend the life of these important works by making them available to future generations of mathematicians and scientists.
From the Back Cover
The Wiley Classics Library consists of selected books that have become recognized classics in their respective fields. With these new unabridged and inexpensive editions, Wiley hopes to extend the life of these important works by making them available to future generations of mathematicians and scientists.
About the Author
E. H. Nicollian (deceased) was a?researcher at AT&T Bell Laboratories, Murray Hill, NJ.
John R. Brews, currently Professor of Electrical Engineering, University of Arizona, Tucson AZ, was a researcher at AT&T Bell Laboratories, Murray Hill, NJ.
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