Ion Implantation and Annealing Applications, Science and Technology: Contributions from IIT School, Edition 2026

Ion Implantation and Annealing Applications, Science and Technology: Contributions from IIT School, Edition 2026 book cover

Ion Implantation and Annealing Applications, Science and Technology: Contributions from IIT School, Edition 2026

Author(s): Wilfried Lerch (Editor), Michael Current

  • Publisher: Springer
  • Publication Date: September 11, 2026
  • Language: English
  • ISBN-10: 3032311721
  • ISBN-13: 9783032311726

Book Description

This book is a new, comprehensive, tutorial-style reference from the IIT2026 school that unifies ion implantation and annealing, guiding the reader from historical context and fundamental beam physics through to full process integration in advanced semiconductor manufacturing. It uniquely combines rigorous coverage of ion sources, beam transport, implanter and annealer hardware, and state of the art thermal processing for Si, Ge, SiC, GaN, and other materials with a practical comparison of commercial tool platforms. Dedicated materials science chapters explain implantation induced defects in key semiconductor materials, their evolution during annealing, and the diffusion and dopant activation mechanisms that ultimately determine device performance, variability, and reliability. Extensive treatments of metrology, contamination control, and safety, together with forward looking application chapters for logic, memory, image sensors, and power devices, make the volume both an ideal introduction for newcomers and an authoritative reference for experienced engineers and scientists.

Editorial Reviews

From the Back Cover

This book is a new, comprehensive, tutorial-style reference from the IIT2026 school that unifies ion implantation and annealing, guiding the reader from historical context and fundamental beam physics through to full process integration in advanced semiconductor manufacturing. It uniquely combines rigorous coverage of ion sources, beam transport, implanter and annealer hardware, and state of the art thermal processing for Si, Ge, SiC, GaN, and other materials with a practical comparison of commercial tool platforms. Dedicated materials science chapters explain implantation induced defects in key semiconductor materials, their evolution during annealing, and the diffusion and dopant activation mechanisms that ultimately determine device performance, variability, and reliability. Extensive treatments of metrology, contamination control, and safety, together with forward looking application chapters for logic, memory, image sensors, and power devices, make the volume both an ideal introduction for newcomers and an authoritative reference for experienced engineers and scientists.

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