Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices

Summarizes new information on HfO2, an emerging ferroelectric material, compares it to other materials, and considers its implementation in semiconductor devices

Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide covers all aspects related to the structural and electrical properties of semiconductor devices, and the implementation of ferroelectric HfO2- and ZrO2-based thin films into these devices, including a comparison to standard ferroelectric materials. Ferroelectric and field-induced ferroelectric properties are considered promising for various applications, including non-volatile memories, ferroelectric field-effect-transistors, energy storage and harvesting, and solid-state cooling.

Fundamentals of ferro-, pyro-, and piezoelectric properties, deposition processes, and the impact of dopants on ferroelectric properties are discussed extensively for HfO2, the first fluorite-structure type ferroelectric material. All aspects of HfO2 as it applies to its ferroelectric properties are reviewed, including phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. The modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HfO2 and standard ferroelectric materials are covered. A summary of HfO2-based devices is also included.

Ferroelectricity in Doped Hafnium Oxide will be interesting to a broad audience ranging from those seeking an understanding of the basic material properties of hafnium oxide to those interested in implementation of HfO2 in novel, highly scaled memory and steep slope devices. New entrants to the field as well as experts are considering the problem of conventional ferroelectrics when it comes to downscaling semiconductor devices. This book provides the perspective of an emerging ferroelectric material that may circumvent the common issues of conventional ferroelectrics and improve device performance. It will provide not only the latest results on a potential solution, but also a comparison between emerging and standard materials, which allows for a better understanding of conventional ferroelectrics.

Features of this book

• Explores all aspects of the structural and electrical properties of HfO2, including processes, modeling, and implementation into semiconductor devices.

• Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs, and more.

• Provides a comparison of emerging ferroelectric to conventional ferroelectric materials, with insights into the problems of downscaling that conventional ferroelectrics encounter.