TERRESTRIAL NEUTRON-INDUCED SOFT ERROR IN ADVANCED MEMORY DEVICES

TERRESTRIAL NEUTRON-INDUCED SOFT ERROR IN ADVANCED MEMORY DEVICES Illustrated Edition book cover

TERRESTRIAL NEUTRON-INDUCED SOFT ERROR IN ADVANCED MEMORY DEVICES Illustrated Edition

Author(s): NAKAMURA TAKASHI ET AL (Author)

  • Publisher: World Scientific Publishing
  • Publication Date: 22 Jun. 2008
  • Edition: Illustrated
  • Language: English
  • Print length: 368 pages
  • ISBN-10: 9789812778819
  • ISBN-13: 9812778810

Book Description

Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features.

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