
Strain Effect in Semiconductors: Theory and Device Applications 2010th Edition
Author(s): Yongke Sun (Author), Scott E. Thompson (Author), Toshikazu Nishida (Author)
- Publisher: Springer
- Publication Date: 20 Nov. 2014
- Edition: 2010th
- Language: English
- Print length: 362 pages
- ISBN-10: 1489983155
- ISBN-13: 9781489983152
Book Description
Editorial Reviews
From the Back Cover
Strain Effect in Semiconductors: Theory and Device Applications 2010th Edition presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. The book discusses relevant applications of strain while also focusing on the fundamental physics as they pertain to bulk, planar, and scaled nano-devices. Lead authors Yongke Sun, Scott Thompson and Toshikazu Nishida also:
- Treat strain physics at both the qualitative overview level as well as provide detailed fundamentals
- Explain strain physics relevant to logic devices as well as strain-based MEMS
This book is relevant to current strained Si logic technology, as well as for understanding the physics and scaling of future strain nano-scale devices. It is perfect for practicing device engineers at semiconductor manufacturers, as well as graduate students studying device physics at universities.
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