Nonequilibrium Carrier Dynamics in Semiconductors: Proceedings of the 14th International Conference, July 25-29, 2005, Chicago, USA 2006th Edition

Nonequilibrium Carrier Dynamics in Semiconductors: Proceedings of the 14th International Conference, July 25-29, 2005, Chicago, USA 2006th Edition book cover

Nonequilibrium Carrier Dynamics in Semiconductors: Proceedings of the 14th International Conference, July 25-29, 2005, Chicago, USA 2006th Edition

Author(s): Marco Saraniti (Editor), Umberto Ravaioli

  • Publisher: Springer
  • Publication Date: September 5, 2006
  • Edition: 2006th
  • Language: English
  • Print length: 385 pages
  • ISBN-10: 9783540365877
  • ISBN-13: 9783540365877

Book Description

“Nonequilibrium Carrier Dynamics in Semiconductors” is a well-established, specialist conference, held every 2 years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing. Papers accepted for publication are selected and peer-reviewed by members of the Program Committee during the conference to ensure both rapid and high-quality processing.

The proceedings of this series of conferences constitute a comprehensive source of reference of the acknowledged state of the art in the field.

Editorial Reviews

From the Back Cover

International experts gather every two years at this established conference to discuss recent developments in theory and experiment in non-equilibrium transport phenomena. These developments have been the driving force behind the spectacular advances in semiconductor physics and devices over the last few decades. Originally known as “Hot Carriers in Semiconductors,” the 14thconference in the series covered a wide spectrum of traditional topics dealing with non-equilibrium phenomena, ranging from quantum transport to optical phenomena in mesoscopic and nano-scale structures. Particular attention was given this time to emerging areas of this rapidly evolving field, with many sessions covering terahertz devices, high field transport in nitride semiconductors, spintronics, molecular electronics, and bioelectronics applications.

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