Microwave Field-Effect Transistors: Theory, design and applications 3rd Edition

Microwave Field-Effect Transistors: Theory, design and applications 3rd Edition book cover

Microwave Field-Effect Transistors: Theory, design and applications 3rd Edition

Author(s): Raymond S. Pengelly (Author)

  • Publisher: SciTech Publishing Inc
  • Publication Date: 30 Jun. 1994
  • Edition: 3rd
  • Language: English
  • Print length: 704 pages
  • ISBN-10: 1884932509
  • ISBN-13: 9781884932502

Book Description

This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations. Perhaps the most comprehensive text on GaAs FET technology and its practical application. It covers the use of MESFET devices in microwave circuits, such as low-noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. This text is a classic reference for all engineers involved in the development of solid state microwave devices.

View on Amazon

电子书代发PDF格式价格30我要求助
未经允许不得转载:Wow! eBook » Microwave Field-Effect Transistors: Theory, design and applications 3rd Edition