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GaN and SiC Power Devices: From Fundamentals to Applied Design and Market Analysis 1st ed. 2024 Edition
Author(s): Maurizio Di Paolo Emilio (Author)
- Publisher: Springer
- Publication Date: 2 Feb. 2024
- Edition: 1st ed. 2024
- Language: English
- Print length: 279 pages
- ISBN-10: 3031506537
- ISBN-13: 9783031506536
Book Description
This book provides a single-source reference for any reader requiring basic and advanced information on wide bandgap semiconductors and related design topics. Focusing on practicability, it explains the principles of GaN and SiC semiconductors, manufacturing, characterization, market and design for key applications.
Editorial Reviews
From the Back Cover
About the Author
Maurizio Di Paolo Emilio is Editor in Chief of Power Electronics News and EEWeb, and an EE Times correspondent. He holds a Ph.D in physics and is a telecommunications engineer. He has worked on projects concerning gravitational waves research, designing a thermal compensation system (TCS) and data acquisition and control systems, and on others about x-ray microbeams in collaboration with Columbia University and motor control for space with INFN. TCS was applied to the Virgo and LIGO experiments, which detected gravitational waves for the first time and earned the Nobel Prize in 2017.
